郝喜红，男，1979年10月生，内蒙古集宁人，中共党员，博士，教授，博士生导师，硕士现任内蒙古科技大学材料与冶金学院党总支书记，中国科学院新疆理化所客座研究员，先后荣获教育部“新世纪优秀人才”、内蒙古“草原英才“、内蒙古“321人才一层次”、内蒙古“青年科技英才领军人才”及包头市“5512领军人才“等称号。

1、工作简历

1998年9月——2002年7月年在东华理工大学无机非金属材料专业攻读学士学位；

2002年9月——2005年7月在西安建筑科技大学材料学院攻读硕士学位；

2005年9月——2008年12月在同济大学功能材料研究所攻读博士学位；

2009年1月——2010年8月在内蒙古科技大学材料与冶金学院无机非金属材料专业从事教学与科研工作，2009晋升为副教授；

2010年9月――2011年7月作为高级访问学者在清华大学材料系从事研究工作；

2011年8月――现在内蒙古科技大学材料与冶金学院无机非金属材料专业从事教学与科研工作，2011年晋升为教授。

2、研究方向、科研成果

郝喜红教授的主要研究领域为：铁电及反铁电材料的储能行为、电卡致冷效应及能量收集性能的基础研究。承担国家自然科学基金、国家科技部973前期项目、教育部“新世纪优秀人才计划”、内蒙古“科技英才”计划及其他省部级科研项目20余项，获省部级成果奖1项，申请国家发明专利14项（授权6项目），目前在国内外相关期刊Progress in Materials Science（IF=23）、Chemical Communications、ACS Applied Materials &Interfaces、Journal of Materials Chemistry C、Applied Physics Letter、Journal of Applied Physics、Journal of the AmericanCeramic Society及Journal of Physics D: Applied Physics等发表学术论文90余篇，被SCI、EI收录80余篇。

（1）反铁电、铁电材料的相变行为研究

研究了组分变化对反铁电、铁电薄膜相变及介电行为的影响，外加温度场及电场对反铁电薄膜相变与热释电性能的影响，Pt、LaNiO₃以及（La，Sr）MnO₃等电极材料对PLZST反铁电薄膜性能影响，氧化物过渡层（TiO₂、ZrO₂及CeO₂等）对反铁电薄膜介电性能的影响，单晶基底（MgO、LaAlO₃、SrTiO₃、Al₂O₃以及Nb-SrTiO₃）对反铁电薄膜微观结构与宏观性能的影响，并对反铁电与反铁磁复合薄膜的结构与电学性能进行了深入研究。

（2）反铁电、铁电厚膜的储能行为研究

基于反铁电与弛豫性铁电材料在电场作用产生的巨大的能量变化，研究了制备工艺、化学组成、厚膜取向及工作温度等因素对反铁电及铁电膜材料储能行为的影响规律，得到了储能密度大于50J/cm³、储能效率高于70%且在室温-100℃范围内可以稳定工作的厚膜材料，推动了这类材料在高储能密度大容量电容器中的应用；

（3）反铁电厚膜电卡效应致冷基础研究

对反铁电厚膜材料在不同电压及工作温度范围内电卡制冷进行了深入研究，通过理论计算得到了巨大的初级制冷温度（50℃），并实现了利用相结构、界面层、晶粒尺度及生长取向等因素对该体系厚膜致冷行为的调控，拓展了该体系材料在新型制冷领域中的应用。

3、承担的科研项目

（1）内蒙古自治区教育厅高等学校科学技术研究项目(2009-2010)，负责人，项目编号：No. NJ09080。

（2）武汉理工大学材料复合新技术国家重点实验室项目（2010-2011），负责人，项目编号：No.2010-KF-5。

（3）教育部科学技术研究重点项目(2010-2012)，负责人，项目编号：No.210038。

（4）教育部“春晖计划” (2009-2010)，负责人，项目编号：No.Z2009-1-01036。

（5）清华大学新型陶瓷与精细工艺国家重点实验室开放课题(2010-2011),负责人。

（6）内蒙古自治区自然科学基金(2010-2012)，负责人，项目编号：No.2010BS0802。

（7）国家自然科学基金青年基金(2011-2013)，负责人，项目编号：No.51002071。

（8）新疆电子信息材料与器件重点实验室开放课(2011-2012)，负责人，项目编号：XJYS0901-2011-01。

（9）内蒙古自治区高等学校“青年科技英才支持计划”B+A类(2012-2014)，负责人。

(10) 2012年教育部“新世纪优秀人才计划” (2012-2014)，负责人。

（11）2013年内蒙古自治区“草原英才”计划（2013-2015），负责人。

（12）国家自然科学基金（2015-2018），负责人。

（13）973计划前期研究专项(2014-2016)，负责人。

（14）内蒙古自然基金杰出青年培养项目(2015-2017)，负责人。

（15）内蒙古自治区高等学校创新团队发展计划(2016-2017)，项目负责人。

4、代表性论著

（1）Xihong Hao,Jiwei Zhai, Xi Yao, “Preparation of highly (111)-oriented (Pb,La)(Zr,Sn,Ti)O₃(PLZST) antiferroelectric thin films by modified sol-gel process using a noveltin source, dibutyloxide of tin”, Journal of Sol-Gel Science andTechnology, 42 (2007) 365-368.

（2）Xihong Hao,Jiwei Zhai, Xiujian Chou, Xi Yao, “The electrical properties and phasetransformation of PLZST 2/85/13/2 antiferroelectric thin films on differentbottom electrode”, Solid State Communications, 142 (2007) 498-503.

（3）Xihong Hao andJiwei Zhai, “Composition-dependent electrical properties of (Pb, La)(Zr, Sn,Ti)O₃antiferroelectric thin films grown on platinum-bufferedsilicon substrates”, Journal of Physics D: Applied Physics, 40 (2007)7447-7453.

（4）Xihong Hao,Jiwei Zhai, Jinbao Xu, Xi Yao, “Preparation of PLZT antiferroelectric thinfilms on ZrO₂buffered substrates”, Ferroelectrics, 357 (2007)253-258.

（5）Xihong Hao,Jiwei Zhai, Jinbao Xu, Xi Yao, “Effect of orientation on the dielectricproperties of Pb_0.97La_0.02Zr_0.95Ti_0.05O₃(PLZT) antiferroelectric thin films”, Ferroelectrics, 357 (2007) 218-222.

（6）Xihong Hao,Jiwei Zhai, Xi Yao, “Electrical properties of Pb_0.97La_0.02(Zr_0.95Ti_0.05)O₃antiferroelectric thin films on TiO₂buffer layer”, MaterialsResearch Bulletin, 43 (2008) 1038–1045.

（7）Xihong Hao,Jiwei Zhai, “Low-temperature growth of (110)-preferred Pb_0.97La_0.02(Zr_0.88Sn_0.10Ti_0.02)O₃antiferroelectric thin films on LaNiO₃/Si substrate”, Journal ofCrystal Growth, 310 (2008) 1137-1141.

（8）Xihong Hao,Jiwei Zhai, and Xi Yao, “Metalorganic chemical liquid deposited (110)-preferredLaNiO₃buffer layer for Pb_0.97La_0.02(Zr_0.85Sn_0.13Ti_0.02)O₃antiferroelectric films”, Ceramic International, 34 (2008) 1007-1010.

（9）Xihong Hao,Jiwei Zhai, Qunping Jia, Bo shen and Xi Yao, “Temperature and frequencydependent electrical properties of (Pb, La)(Zr, Sn, Ti)O₃antiferroelectric thin films on LaNiO₃bottom electrode withdifferent sheet resistance”, Journal of Physics D: Applied Physics, 41 (2008)165403(1-6).

（10）Xihong Hao,Jiwei Zhai, and Xi Yao, “Dielectric tunable properties and relaxor behavior of(Pb_0.5Ba_0.5)ZrO₃thin films”, Journal of theAmerican Ceramic Society, 91[12] (2008) 4112-4114.

（11）Xihong Hao,Jiwei Zhai, “Improved dielectric properties of (110)-preferred (Pb, La) (Zr,Sn, Ti)O₃antiferroelectric thin films on metalorganic decompositionderived LaNiO₃buffer layer”, Journal of Crystal Growth, 311 (2008)90-94.

（12）Xihong Hao,Jiwei Zhai, Xi Yao, “A comprehensive investigation on the phase transformationbehavior and electrical properties of (Pb_1-xBa_x)ZrO₃(0≤x≤0.5) thin films”, Journal of Applied Physics, 104 (2008)124101(1-6).

（13）Xihong Hao,Jiwei Zhai, and Xi Yao, “Dielectric properties of Pb_0.97La_0.02(Zr_0.87-xSn_xTi_0.13)thin films with compositions near the morphotropic phase boundary”, Journal ofthe American Ceramic Society, 92[1] (2009) 286-288.

（14）Qunping Jia, BoShen, Xihong Hao, Sannian Song, Jiwei Zhai, “Anomalous dielectric properties ofBa_1?xCa_xTiO₃thin films near the solubilitylimit”, Materials Letters, 63 (2009) 464-466.

（15）Lina Gao, JiweiZhai, Sangnian Song, Xihong Hao, Xi Yao, “Effects of CeO₂bufferlayer thickness on the orientation and dielectric properties of Ba(Zr_0.20Ti_0.80)O₃thin films”, Journal of Crystal Growth, 311(2) (2009) 299-303.

（16）Xihong Hao,Jiwei Zhai, Xi Yao, “Improved energy storage performance and fatigue enduranceof Sr-doped PbZrO₃antiferroelectric thin films”, Journal of theAmerican Ceramic Society, 92[5] (2009) 1133-1135.

（17）Xihong Hao,Jiwei Zhai; Jichun Yang, Huiping Ren, and Xiwen Song, “Improved field-inducedstrains and fatigue endurance of PLZT antiferroelectric thick films byorientation control”, Phys. Status Solidi RRL, 7-8 (2009) 248-250.

（18）Xihong Hao,Jiwei Zhai, Xiwen Song, Jichun Yang, and Huiping Ren, “Fabrication andcharacterization of sol-gel derived (100)-textured (Pb_0.97La_0.02)(Zr_0.95Ti_0.05)O₃thin films”, Journal of the American Ceramic Society, 92[12] (2009) 3081-3083.

（19）Xihong Hao, andJiwei Zhai, “Dielectric properties of Pb_1-xBa_xZrO₃thin films with higher barium content”, Key Engineering Materials, 421-422(2010) 199-122.

（20）Xihong Hao,Jiwei Zhai, Fen Zhou, Xiwen Song, and Shengli An, “Thickness and frequencydependence of electric-field-induced strains of sol-gel derived (Pb_0.97La_0.02)(Zr_0.95Ti_0.05)O₃antiferroelectric films”, Journal of Sol-Gel Science and Technology, 53(2010) 366-371.

（21）Xihong Hao, Jiwei Zhai,Jing Zhou, Jichun Yang, Xiwen Song, and Shengli An, “Structure and dielectrictunability of (Pb_0.5Ba_0.5)ZrO₃thin filmsderived on (Sr_0.95La_0.05)TiO₃buffer-layeredsubstrates”, Journal of Crystal Growth, 312 (2010) 667-670.

（22）Xihong Hao,Jiwei Zhai, Huiping Ren, Xiwen Song, and Jichun Yang, “Fabrication and tunabledielectric properties of magnesium-doped lead barium zirconate thin films”,Journal of the American Ceramic Society, 93[3] (2010) 646-649.

（23）Xihong Hao,Jiwei Zhai, Jing Zhou, Xiaowei Li, and Shengli An, “Enhanced dielectricproperties of lead barium zirconate thin films by manganese doping”, Applied SurfaceScience, 256 (2010) 4902-4905.

（24）Xihong Hao,Jiwei Zhai, Fei Shang, Jing Zhou, and Shengli An, “Orientation-dependent phaseswitching process and strains of Pb_0.97La_0.02(Zr_0.85Sn_0.13Ti_0.02)O₃antiferroelectric thin films”, Journal of Applied Physics, 107 (2010) 116101-1-3.

（25）Xihong Hao,Zhiqing Zhang, Jing Zhou, Shengli An, and Jiwei Zhai, “Preparation andDielectric properties of compositionally graded lead barium zirconate thinfilms”, Journal of Alloys and Compounds, 501 (2010) 358-361.

（26）Qunping Jia, BoShen, Xihong Hao, Jiwei Zhai, Xi Yao, “Enhanced dielectric property from highly(100)-oriented barium zirconate titanate compositional gradient films”, ThinSolid Films, 518 (2010) e89-e92.

（27）Xihong Hao,Jiwei Zhai, Jing Zhou, Zhenxing Yue, Jichun Yang, Wenguang Zhao, and ShengliAn, "Structure and electrical properties of PbZrO₃antiferroelectric thin films doped with barium and strontium”, Journal ofAlloys and Compounds, 509 (2011) 271-275.

（28）Xihong Hao,Jiwei Zhai, Zhenxing Yue, Jing Zhou, Jichun Yang, and Shengli An, “Effect ofoxide buffer layer on the microstructure and dielectric properties of PLZST 2/87/10/3 antiferroelectric thin films”, Journal of Crystal Growth, 314 (2011) 151-156.

（29）Xihong Hao,Jiwei Zhai, Zhenxing Yue, Jing Zhou, Xiwen Song, and Shengli An, “Structure anddielectric performance of K-doped (Pb_0.5Ba_0.5)ZrO₃thin films”, Materials Research Bulletin, 46 (2011) 420-423.

（30）Xihong Hao,Jing Zhou, and Shengli An, “Effects of PbO content on the dielectric propertiesand energy storage performance of (Pb_0.97La_0.02)(Zr_0.97Ti_0.03)O₃antiferroelectric thin films” , Journal of the American Ceramic Society, 94[6](2011) 1647-1650.

（31）Yunying Liu,Xihong Hao^*, Jing Zhou, Jibao Xu, andShenli An, “Effects of raw materials on the structure and dielectric propertiesof PbZrO₃antiferroelectric thin films prepared from sol-gelprocess”, Journal of Alloys and Compounds, 509 (2011) 8779-8782.

（32）Xihong Hao,Jiwei Zhai, Zhenxing Yue and Jinbao Xu, “Phase transformation properties ofhighly (100)-oriented PLZST 2/85/12/3 antiferroelectric thin films deposited on Nb-SrTiO₃single-crystalsubstrates”, Journal of the American Ceramic Society, 94[9] (2011) 2816-2818.

（33）Xihong Hao^*, Zhenxing Yue, Jinbao Xu, Shengli An, and Cewen Nan, “Energystorage performance and electrocaloric effect in (100)-preferred Pb_0.97La_0.02(Zr_0.95Ti_0.05)O₃antiferroelectric thick films”, Journal of Applied Physics, 110 (2011) 064109-1-5.

（34）Xihong Hao^*, Peng Wang, Shengli An, Jingbao Xu, and Zhenxing Yue,“Effects of sol aging time on the microstructure and electrical properties of(Pb_0.5Ba_0.5)ZrO₃thin films”, Journal ofAlloys and Compounds, 519 (2012) 37-40.

（35）Ying Wang,Xihong Hao^*, and Jinbao Xu, “Effectsof PbO-insert layer on the microstructure and energy storage performance of(042)-preferred PLZT antiferroelectric thick films”, Journal of MaterialsResearch, 27 (2012) 1770-1775.

（36）Ying Wang,Xihong Hao^*, Jichun Yang, Jinbao Xu,Diyi Zhao, “Fabrication and energy-storage performance of PLZTantiferroelectric thick films derived from polyvinylpyrrolidone-modifiedchemical solution”, Journal of Applied Physics, 112 (2012) 034105-1-6.

（37）XihongHao^*, Ying Wang, Jichun Yang, Shenli An, and Jinbao Xu, “Highenergy-storage performance in PLZT relaxor ferroelectric thin films”, Journalof Applied Physics, 112 (2012) 114111-1-6.

（38）Xihong Hao^*, Peng Wang, Xuefeng Zhang, and Jinbao Xu, “Microstructureand Improved Energy-Storage Performance of PbO-B₂O₃-SiO₂-ZnOglass added (Pb_0.97La_0.02)(Zr_0.97Ti_0.03)O₃Antiferroelectric Thick Films”, Materials Research Bulletin, 48 (2013) 84-88.

（39）Xihong Hao^*, “A review on the dielectric materials for highenergy-storage application”, Journal of Advanced Dielectrics, 3(2013) 1330001-1-14. (Invited review)

（40）Xihong Hao^*, Ying Wang, Le Zhang, Liwen Zhang and Shengli An,“Composition-dependent dielectric and energy-storage properties in(Pb,La)(Zr,Sn,Ti)O₃antiferroelectric thick films”, Applied PhysicsLetter, 102 (2013) 163903-1-4.

（41）Liwen Zhang,Xihong Hao^*, Jichun Yang, Shengli An,and Bo Song, “Large enhancement of energy-storage properties in compositionalgraded (Pb_1-xLa_x)(Zr_0.65Ti_0.35)O₃relaxor ferroelectric thick films”, Applied Physics Letter, 103 (2013) 113902-1-3.

（42）Yunying Liu,Xihong Hao^*, and Shengli An,“Significant enhancement of energy-storage performance of (Pb_0.91La_0.09)(Zr_0.65Ti_0.35)O₃relaxor thick films by Mn doping”, Journal of Applied Physics, 114 (2013) 174102-1-6.

（43）Xihong Hao,Jiwei Zhai, “Electric-field tunable electrocaloric effects from phasetransition between antiferroelectric and ferroelectric phase”, Applied PhysicsLetter, 104, (2014) 022902-1-4.

（44）Xihong Hao,Jiwei Zhai, Lingbing Kong, and Zhengkui Xu, “A comprehensive review on theprogress of lead zirconate-based antiferroelectric materials”, Progress inMaterials Science, 63, (2014) 1-57.

（45）Ye Zhao, andXihong Hao^*, and Meiling Li,“Dielectric properties and energy-storage performance of (Na_0.5Bi_0.5)TiO₃thick films” , Journal of Alloys and Compounds, 601, (2014) 112-115.

（46）Le Zhang,Xihong Hao^*, and Liwen Zhang,“Enhanced energy-storage performances of Bi₂O₃-Li₂Oadded (1-x)(Na_0.5Bi_0.5)TiO₃-xBaTiO₃thick films” , Ceramic International, 40, (2014) 8847-8851.

（47）Ye Zhao, Xihong Hao^*, and Qi Zhang, “Energy-storageproperties and electrocaloric effects ofPb_(1-3x/2)La_xZr_0.85Ti_0.15O₃antiferroelectric thick films”, ACS Applied Materials & Interfaces,6,(2014) 11633-11639.

（48）Ye Zhao,Xihong Hao^*, and Qi Zhang, “A giant electrocaloriceffect of Pb_0.97La_0.02(Zr_0.75Sn_0.18Ti_0.07)O₃antiferroelectric thick films at room temperature”,Journal of MaterialsChemistry C,3(2015) 1694-1699.

（49）Xihong Hao^*, Ye Zhao, and Qi Zhang, “Phasestructure tuned electrocaloric effect and pyroelectric energy harvestingperformance of (Pb_0.97La_0.02)(Zr,Sn,Ti)O₃antiferroelectric thick films”,the Journal of Physical ChemistryC,119(2015)18877-18885.

（50）Qiwei Zhang,Ke Chen,Leilei Wang,Haiqin Sun,Xusheng Wang, andXihong Hao, “A highlyefficient, orange light-emitting (K_0.5Na_0.5)NbO₃:Sm³⁺/Zr⁴⁺lead-free piezoelectric material with superior water resistance behavior”, Journal of Materials Chemistry C,3(2015) 5275-5284.

（51）Qiwei Zhang,Xuewen Zheng,HaiqinSun,Wenqing Li,Xusheng Wang,Xihong Hao^*, and Shengli An, “Dual-mode luminescencemodulation upon visible light-driven photochromic with high contrast forinorganic luminescence ferroelectrics”,ACS Applied Materials & Interfaces,8(2016) 4789-4794.

（52）Ye Zhao, Hongcheng Gao,XihongHao^*,and Qi Zhang, “Orientation-dependent energy-storage performance and electrocaloriceffect in PLZST antiferroelectric thick films”,Materials Research Bulletin,84(2016) 177-184.

（53）Hongcheng Gao, Ningning Sun, Yong Li, Qiwei Zhang,XihongHao^*,Ling Bing Kong, Qing Wang, “Enhancedelectrocaloric effect and energy-storage performance in PBLZT films with variousBa²⁺content”,Ceramic International,42(2016) 16439-16447.

（54）Liming Chen, Yong Li, QiweiZhang, andXihong Hao^*, “Theelectrical propertiesandenergy-storage performance of (Pb_0.92Ba_0.05La_0.02)(Zr_0.68Sn_0.27Ti_0.05)O₃antiferroelectric thick films prepared by tape-casing method”,Ceramic International,42(2016) 12537-12542.

（55）Qiwei Zhang, Yao Zhang, Haiqin Sun^*, Qi Sun, Xusheng Wang, Xihong Hao, ShengliAn,“The photoluminescence，photochromism and reversible luminescence modulationbehavior for Sm doped Na_0.5Bi_2.5Nb₂O₉ferroelectrics”，Journal of the European Ceramic Society,37(2017) 955-966.

5、所获荣誉

（1）纳米粉体材料的分散与应用开发,陕西高等学校科学技术三等奖,第六完成人, 2005年.

（2）“The electricproperties of PLZST antiferroelectric thin films on different substrates”,“Second Award for Poster Presentation”, The 5th Asian Meeting onElectriceramics (AMEC-5), Dec. 10-14, 2006, Bangkok, Thailand.

（3）“The structureand relaxor phase transformation behavior of (Pb_1-xBa_x)ZrO₃thin films”, Young scientist, The 6th Asian Meeting on Electriceramics(AMEC-6), Oct. 21-24 2008, Tsukuba, Japan.

（4）“包头市优秀青年岗位能手”, 2011年,包头市人力资源和社会保障局.

（5）“包头市5512领军人才” , 2012年,包头市人力资源和社会保障局.

（6）2013年内蒙古自治区高等学校“青年科技英才计划”A类（优秀青年科技领军人才）.

（7）2013年内蒙古自治区“草原英才”.

（8）2014年包头市优秀教师.

（9）2014年度内蒙古自治区优秀硕士研究生指导教师.

（10）2015年度内蒙古自治区“321”一层次人才.

（11）2015年度内蒙古自治区高校系统优秀共产党员.

（12）2015年内蒙古自治区青年科技奖.

（13）2015年包头市首届“鹿城英才”高端人才称号.

6、已毕业研究生情况